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Silicon Wafers for Energy Research

Silicon WafersSilicon WafersSilicon Wafers

We offer a wide range of silicon wafers, produced to exact customer requirements or as standard wafer specifications available from stock.

If you can't find what you are looking for from our stocked range, please contact us on +44 (0) 1827 259250 or us our 'Request Quote' button above.

Below are our most requested lines, however we welcome any enquiry for other specifications:

 

Grades

 

Prime

Test

Reclaim

Mechanical

 

Diameter & Thickness

 

Size

Standard Thickness (µm)

Tolerance (+/- µm)

1” (25.4mm)

250

15

2” (50.8mm)

275

25

3” (76.2mm)

380

25

4” (100mm)

525

20

5” (125mm)

625

20

6” (150mm)

675

20

8” (200mm)

725

25

Specialist thin wafers available: 1” down to 10 µm thick / 4” down to 90 µm thick / 6” down to 150µm thick

Custom thicknesses available on request

 

Type & Dopant

 

Type

Dopant

Intrinsic

-

n-type

P- Phosphorous, Sb - Antimony, As - Arsenic

p-type

B - Boron

Heavy P or B doping is also available

 

Resistivity

 

Crystal Growth Method

From

To

Czochralski (CZ)

 1 milliohm-cm

150 ohm-cm

 Float Zone (FZ)

-

Up to 10,000 ohm-cm

 

Orientation

 

Orientation

Tolerance

<100>

Standard +/- 0.5º & Custom up to +/- 0.05º

<110>

<111>

Custom Orientations & Off Orientations (up to 40º) available on request

 

Surface

 

As cut

Lapped

Etched

Single Side Polished

Double Side Polished

On polished surface: Roughness <2Å / Total Thickness Variation (TTV) <1µm

Laser marking available on request

 

Silicon as a Substrate

 

Type

Specifications

Windows

As per customer drawings

Components

As per customer drawings

Blocks

To customer specification including surface roughness & flatness

We can also supply Germanium single crystal components

 

Platinised Wafers

 

 

Specifications

Diameter

4” Standard or other sizes available upon request

Layers

Thermal SiO2, TiO2 or Ti Adhesion, Platinum E-Beam

 

Silicon on Insulator (SOI) Wafers

 

 

Specifications

Size

As per customer specification

Layers

Handle, Device, Buried Oxide (BOX) - All layers as per customer specification

 

SERVICES

Coatings

 

Type

Method

Thickness (nm)

Diameter

SiO2 Silicon Dioxide

Wet Oxidation

200-3000

From 1” to 6”

High Purity Dry Oxidation

20-300

From 1” to 6”

Single face oxidation also available

Si3N4 Silicon Nitride

LPCVD or PECVD

20-500

From 2” to 6”

Metal Coatings including:

Cr, Ti, Au, Al, Pt, Mo, W, Ni, Cu, Ir, Ta

PVD Sputtering

or

Evaporation

20-1000

From 1’’ to 6’’

(depending on metals)

Other metal coatings & multi-layer deposition available on request

 

Dicing Services

 

Form

Specifications

Tiles

E.g. 10mm x 10mm, 20mm x 20mm (minimum size 1.5mm x 1.5mm)

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