
Wafers are used in a wide variety of applications, including the manufacture of semiconductors, solar cells, and batteries.
PI-KEM, working in partnership with MTI Corporation, and other suppliers, provides a wide range of wafers including:
- Silicon
- Silicon carbide
- Semiconductor wafers (III-V and II-VI)
- Platinised Silicon
- Ultrathin & Ultrathick wafers
- Silicon on Insulator (SOI)
- Silicon as a substrate
- Glass

Silicon Wafers
Silicon wafers are the foundation of the semiconductor industry, being used to create the chips that power our computers, phones, and other electronic devices.
PI-KEM offers a wide range of silicon wafers with standard wafers available from stock or manufactured to customer specifications.
Options include:
Grade: Prime, test, reclaim and mechanical
Diameter & Thickness
Size Standard Thickness (μm) Tolerance (+/- μm) 1” (25.4mm) 250 25 2” (50.8mm) 275 25 3” (76.2mm) 380 25 4” (100mm) 525 25 6” (150mm) 675 25 8” (200mm) 725 25 12” (300mm) 775 25 Custom thicknesses available on request
Type & Dopant
Type Dopant Intrinsic - n-type P - Phosphorous, Sb - Antimony, As - Arsenic p-type B - Boron Heavy P or B doping is also available Resistivity
Crystal Growth Method From To Czochralski (CZ) 1mΩ-cm 150 Ω-cm Float Zone (FZ) - Up to 10,000 Ω-cm Orientation
Orientation Tolerance <100> Standard +/- 0.5º & Custom up to +/- 0.05º <110> <111> Surface
As Cut Lapped Etched Single Side Polished Double Side Polished On polished surface: Roughness <2Å / Total Thickness Variation (TTV) <1μm
Laser marking available on request
Silicon Carbide
Silicon carbide wafers offer advantages over pure silicon wafers including:
- Wider band gap allowing SiC devices to operate at higher voltage and frequency. This reduces heat generated and increases the efficiency of power conversion
- Higher thermal conductivity giving better heat dissipation and so higher working temperatures
- Chemical inertness so can operate in harsher environments
- Radiation hardness so it is less susceptible to radiation damage than silicon
We offer a wide range of Silicon Carbide (SiC) wafers, produced to exact customer requirements or as standard wafer specifications. Below are our most requested lines, however we welcome any enquiry for other specifcations:
Options include:
Grades: Production / Prime, Research, Dummy
Polytypes: 4H, 6H, 3C
Diameters: 1", 2", 3", 4", 6", 8", plus 5 mm × 5 mm and 10 mm × 10 mm
Thickness: Standard thicknesses from 250 µm to 725 µm depending on diameter; custom diameters and thicknesses available
Type & Dopant: HPSI, semi-insulating, intrinsic, n-type and p-type options
Dopants: Vanadium, Phosphorous, Nitrogen, Aluminium and Boron depending on type
Notch: Standard or custom
Packaging: Single wafer or packs of 25
Surface Finish: Single-side polished or double-side polished
Surface Roughness: Front surface Ra <0.5 nm; back surface Ra <1.0 nm
Particles: ≥0.3 µm (≤100 particles/wafer) / ≥5.0 µm (0 particles/wafer)Other specifications are available depending on wafer type and requirement:
- Orientation
- Resistivity
- TTV / Bow / Warp
- Thermal Conductivity
- Micropipe Density
Semiconductor Wafers
Semiconductor wafers are used in the fabrication of integrated circuits (ICs), acting as a foundation for the building of devices. Specific properties of semiconductor wafers include:
- High purity giving more precise control of their electrical properties and essential for the manufacture of high-performance transistors
- Monocrystalline giving consistent electrical properties
- High surface flatness crucial for the precise patterning of circuits and the fabrication of electronic devices
- Tight dimensional tolerances critical for the maintenance of electrical performance across the whole wafer
Options include:
III-V Wafers
- Gallium Arsenide (GaAs)
- Gallium Nitride (GaN)
- Gallium Phosphide (GaP)
- Indium Phosphide (InP)
- Indium Antimonide (InSb)
- Indium Arsenide (InAs)
II-VI Wafers
- Zinc Telluride (ZnTe)
- Zinc Selenide (ZnSe)
- Zinc Sulphide (ZnS)
- Cadmium Sulphide (CdS)
- Cadmium Telluride (CdTe)
- Cadmium Telluride doped with Zinc (Cd-Zn-Te)
Other Group Wafers
- Silicon Germanium (SiGe)
Specifications:
Grades: Prime, Test, Mechanical
Type: n-type, p-type and semi-insulating
Diameters: 1", 2", 3", 4", 6", 8", plus 5 mm × 5 mm and 10 mm × 10 mm
Thickness: Standard thicknesses from 250 µm to 725 µm depending on diameter
Custom Options: Resistivity, surface finish, orientation, thickness and dopants
Custom Diameters & Thicknesses: Available on request
Platinised Silicon
PI-KEM platinised silicon wafers provide a robust and versatile substrate platform for advanced research and device development. Platinised silicon wafers combine high-quality silicon substrates with a thin platinum layer, offering high conductivity, catalytic properties, and thermal and mechanical stability, while retaining the ability to be fabricated using the same processes as silicon wafers.
Applications include:
- Gas sensors
- Photovoltaic cells
- Fuel cells
PI-KEM offer platinised silicon, manufactured to customer specifications
- Diameter: 4” standard, other sizes available
- Standard Layers: Thermal SiO2, TiO2 or Ti Adhesion, Platinum E-Beam
Product Overview
Specification Details Diameter 4" Standard or other sizes available upon request Substrate Boron-doped silicon (standard)
Custom substrate parameters available, or customer-supplied substrates acceptedLayers Thermal SiO2, TiO2 or Ti Adhesion.
Platinum (E-Beam Deposition)
- Standard thickness: ~150 nm
- Optional thickness range: down to ~20 nm
Crystallographic Properties Predominantly (111) platinum texture
Minor (100) components
Well-defined surface structure suitable for reproducible thin-film growth and consistent electrical behaviourElectrical & Thermal Performance Excellent electrical conductivity
High resistance to oxidation and corrosion
Stable under repeated high-temperature processing and annealing cycles
Compatible with aggressive chemical environmentsCustomisation Options Global platinum films or patterned electrode features
Platinum supplied as:- Bottom electrode
- Top electrode
- Combined top and bottom electrode structures
Single-side or double-side platinum coating
Integrated Cr/Au interconnects
Custom wafer diameters, thicknesses, and layer stacks available
Silicon on Insulator (SOI) Wafers
Silicon on Insulator (SOI) wafers are semiconductor wafers that have a thin layer of silicon dioxide (SiO2) insulating material between a top silicon layer and a silicon substrate. This structure provides advantages over silicon wafers, including:
- Reduced parasitic capacitance: Improving speed and power efficiency of transistors
- Improved isolation of transistors
- Increased radiation hardness, protecting transistors from damage
PI-KEM supplies a range of SOI wafers, manufactured to customer specifications.
Product Overview
Specification Details Size As per customer specification Layers Handle, Device, Buried Oxide (BOX) - All layers as per customer specification
Silicon as a Substrate
Silicon is a widely used substrate material in various fields, including electronics, photonics, and biomedicine. Its unique properties, such as its high electrical conductivity, optical transparency, and biocompatibility, make it an ideal material for a wide range of applications.
PI-KEM can offer silicon in forms for use as a substrate. All parts are manufactured to customer specifications.
Form:
- Windows
- Custom components
- Blocks
Germanium single crystal components also available
Type Specifications Windows As per customer drawings Components As per customer drawings Blocks To customer specification including surface roughness & flatness We can also supply Germanium single crystal components
Ultra-Thin & Ultra-Thick Wafers
Whether you require a standard specification or a fully bespoke solution, we offer a comprehensive range of custom geometries, thicknesses, machining and finishing options to ensure your silicon wafers meet the exact requirements of your application.
Ultra-Thin Silicon Wafers
Ultra-thin wafers offer improved thermal, electrical and mechanical performance for advanced R&D applications. These wafers provide:
- Reduced mass
- Lower resistance
- Increased flexibility
- Improved thermal management
These wafers are widely used in:
- Semiconductor manufacturing
- MEMS devices
- Photonics
- Flexible electronics
Thickness
Typical thickness below 100 µm, however thickness as low as 30–40 µm are also available, with tolerances as tight as ±10 µm.
Alongside their extremely low thickness, every wafer is manufactured to demanding flatness and quality standards to ensure reliable downstream processing.
Diameter
Available in diameters up to 300mm, but custom specifications can also be requested.
Ultra-Thick Silicon Wafers
Ultra-thick wafers provide the rigidity, strength, and stability required for demanding mechanical and specialist engineering applications.
- Defence technologies
- Aerospace systems
- Thermal management systems
- Photolithography & etching
- Power electronics
Thickness
Up to 30 mm thick, with tolerances of ± 25–50 µm.
Order Your Wafers with PI-KEM
PI-KEM supplies a range of wafers to support semiconductor, electronics, energy, and photonics research. Working in partnership with leading suppliers like D&X, SurfaceNet and MTI Corporation, we offer silicon, silicon carbide, semiconductor (III-V and II-VI), platinised silicon, SOI wafers, and more. Each wafer can be manufactured to your exact specifications.
Whether you need standard sizes, ultrathin® wafers, or custom-engineered substrates, our materials are carefully sourced to ensure purity, consistency, and performance. Our technical team can guide you in selecting the most suitable wafer type, dopant, thickness, or orientation for your project. We also provide access to processing services through our trusted partners.
Ready to order your Wafers?
📞 Call our technical team on 01827 259250
📧 Email sales@pi-kem.co.uk
📝 Complete our online enquiry form




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